temt3700 document number 81555 rev. 1.5, 08-mar-05 vishay semiconductors www.vishay.com 1 94 8553 silicon npn phototransistor description temt3700 is a high speed s ilicon npn epitaxial pla- nar phototransistor in a miniature plcc-2 package for surface mounting on printed boards. due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. features ? plcc-2 smd package extra wide viewing angle ? = 60 package notch = collector base terminal not connected fast response times suitable for visible and near infrared radiation matches with ir emitter tsms3700 lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications miniature switches counters and sorters interrupters tape and card readers encoders position sensors parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code remarks TEMT3700-GS08 TEMT3700-GS08 moq: 7500 pc (5 reels) temt3700-gs18 temt3700-gs18 moq: 8000 pc (1 reel) parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 5v collector current i c 50 ma collector peak current t p /t 0.1, t p 10 si cm 100 ma total power dissipation t amb 55 c p tot 100 mw junction temperature t j 100 c storage temperature range t stg - 55 to + 100 c soldering temperature t 3 s t sd 260 c thermal resistance junction/ ambient r thja 450 k/w
www.vishay.com 2 document number 81555 rev. 1.5, 08-mar-05 temt3700 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector-emitter dark current v ce = 20 v, e = 0 i ceo 1 200 na collector-emitter capacitance v ce = 5 v, f = 1 mhz, e=0 c ceo 3pf parameter test condition symbol min ty p. max unit collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v i ca 0.25 0.5 ma angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 830 nm range of spectral bandwidth 0.5 620 to 980 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.1 ma v cesat 0.15 0.3 v rise time / fall time v s = 5 v, i c = 1 ma, = 950 nm, r l = 1 k ? t r / t f 6 s v s = 5 v, i c = 1 ma, = 950 nm, r l = 100 ? t r / t f 2 s cut-off frequency v s = 5 v, i c = 2 ma, r l = 100 ? f c 180 khz figure 1. total power dissipati on vs. ambient temperature 020406080 0 25 50 75 100 125 p Ctotal power dissipation ( mw ) tot t amb C ambient temperature ( c ) 100 94 8308 r thja iure 2colletordarcurrentsambienttemperature 94 8304 20 i - collector dark current ( na ) ceo 100 40 60 80 t amb - ambient temperature ( c) 10 0 10 1 10 2 10 3 10 4 v ce =20v
temt3700 document number 81555 rev. 1.5, 08-mar-05 vishay semiconductors www.vishay.com 3 figure 3. relative collector cu rrent vs. ambient temperature figure 4. collector light current vs. irradiance figure 5. collector light current vs. collector emitter voltage 94 8239 0 0.6 0.8 1.0 1.2 1.4 2.0 i - relative collector current ca rel 20 40 60 80 100 1.6 1.8 v ce =5v e e = 1 mw/cm 2 = 950 nm t amb - ambient temperature ( c) 0.01 0.1 1 0.001 0.01 0.1 1 10 i C collector light current ( ma) ca e e C irradiance ( mw/cm 2 ) 10 94 8316 v ce =5v = 950 nm temt 3704 0.1 1 10 0.1 1 10 i C collector light current ( ma) ca v ce C collector emitter voltage ( v ) 100 94 8317 e e =1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 = 950 nm 0.1 1 10 0 2 4 6 8 10 v ce - collector emitter voltage ( v ) 100 94 8294 c - collector emitter capacitance ( pf ) ceo f=1mhz 0 2 8 94 8293 t / t - turn on / turn off time ( s) off i c - collector current ( ma ) on 6 4 v ce =5v r l = 100 = 950 nm t off t on ? 2 046 14 12 10 8 400 600 1000 0 0.2 0.4 0.6 0.8 1.0 s ( ) C relative spectral sensitivity rel C wavelength ( nm ) 94 8348 800
www.vishay.com 4 document number 81555 rev. 1.5, 08-mar-05 temt3700 vishay semiconductors package dimensions in mm 0.4 0.2 0 0.2 0.4 s - relative sensitivity rel 0.6 94 8318 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 9. relative radiant sensitivity vs. angular displacement 95 11316 mounting pad layout 3.5 0.2 0.85 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 c e 2.2 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications
temt3700 document number 81555 rev. 1.5, 08-mar-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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